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1 IPN70R600P7S rev.2.2,2018-02-13 final data sheet pg-sot223 mosfet 700vcoolmosap7powertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies. thelatestcoolmos?p7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,tv,etc. thenewseriesprovidesallthebenefitsofafastswitchingsuperjunction mosfet,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. features ?extremelylowlossesduetoverylowfomr ds(on) *q g andr ds(on) *e oss ?excellentthermalbehavior ?integratedesdprotectiondiode ?lowswitchinglosses(e oss ) ?productvalidationacc.jedecstandard benefits ?costcompetitivetechnology ?lowertemperature ?highesdruggedness ?enablesefficiencygainsathigherswitchingfrequencies ?enableshighpowerdensitydesignsandsmallformfactors potentialapplications recommendedforflybacktopologiesforexampleusedinchargers, adapters,lightingapplications,etc. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j=25c 700 v r ds(on),max 0.6 w q g,typ 10.5 nc i d,pulse 20.5 a e oss @ 400v 1.2 j v (gs)th,typ 3 v esd class (hbm) 2 type/orderingcode package marking relatedlinks IPN70R600P7S pg-sot223 70s600 see appendix a d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 8.5 5 a t c = 20c t c = 100c pulsed drain current 2) i d,pulse - - 20.5 a t c =25c application (flyback) relevant avalanche current, single pulse 3) i as - - 3.2 a measured with standard leakage inductance of transformer of 7 m h mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...400v gate source voltage v gs -16 -30 - - 16 30 v static; ac (f>1 hz) power dissipation p tot - - 6.9 w t c =25c operating and storage temperature t j , t stg -40 - 150 c - continuous diode forward current i s - - 2.3 a t c =25c diode pulse current 2) i s,pulse - - 20.5 a t c = 25c reverse diode dv/dt 4) dv/dt - - 1 v/ns v ds =0...400v, i sd <= i s , t j =25c maximum diode commutation speed 4) di f /dt - - 50 a/ m s v ds =0...400v, i sd <= i s , t j =25c insulation withstand voltage v iso - - n.a. v v rms , t c =25c, t=1min 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - solder point r thjs - - 18.2 c/w - thermal resistance, junction - ambient for minimal footprint r thja - - 160 c/w minimal footprint thermal resistance, junction - ambient soldered on copper area r thja - - 75 c/w device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer 70 m m thick) copper area for drain connection and cooling. pcb is vertical without blown air. soldering temperature, wavesoldering only allowed at leads t sold - - 260 c reflow msl1 1) dpak / ipak equivalent. limited by t j max . t j = 20c. maximum duty cycle d=0.5 2) pulse width t p limited by t j,max 3) proven during verification test. for explanation please read an - coolmos tm 700v p7. 4) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 700 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.09ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =700v, v gs =0v, t j =25c v ds =700v, v gs =0v, t j =150c gate-source leakage current incl. zener diode i gss - - 1 m a v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.49 1.03 0.60 - w v gs =10v, i d =1.8a, t j =25c v gs =10v, i d =1.8a, t j =150c gate resistance r g - 10 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 364 - pf v gs =0v, v ds =400v, f =250khz output capacitance c oss - 7 - pf v gs =0v, v ds =400v, f =250khz effective output capacitance, energy related 1) c o(er) - 17 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 200 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 14 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w rise time t r - 5.5 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w turn-off delay time t d(off) - 63 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w fall time t f - 23 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1.6 - nc v dd =400v, i d =1.4a, v gs =0to10v gate to drain charge q gd - 3.7 - nc v dd =400v, i d =1.4a, v gs =0to10v gate charge total q g - 10.5 - nc v dd =400v, i d =1.4a, v gs =0to10v gate plateau voltage v plateau - 4.4 - v v dd =400v, i d =1.4a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =2.5a, t j =25c reverse recovery time t rr - 190 - ns v r =400v, i f =1.4a,d i f /d t =50a/s reverse recovery charge q rr - 0.8 - c v r =400v, i f =1.4a,d i f /d t =50a/s peak reverse recovery current i rrm - 9 - a v r =400v, i f =1.4a,d i f /d t =50a/s d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -1 10 0 10 1 10 2 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 98% typ r ds(on) =f( t j ); i d =1.8a; v gs =10v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 5 10 15 20 25 25 c 150 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 0 1 2 3 4 5 6 7 8 9 10 400 v 120 v v gs =f( q gate ); i d =1.4apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0 1 2 3 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 600 620 640 660 680 700 720 740 760 780 800 820 840 v br(dss) =f( t j ); i d =1ma d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 -1 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss = f (v ds ) d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
11 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet 6packageoutlines figure1outlinepg-sot223,dimensionsinmm/inches d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min 0.181 basic ? 0.130 0.264 0.060 0.116 0.009 0.248 0.024 7.30 6.70 0.80 0.32 3.10 0.10 1.80 0.091 basic 0.287 0.264 0.031 0.122 0.013 0.071 0.004 max inches min max 3.70 0.146 a2 1.70 0.067 0.75 1.10 0.030 ? ? - 3 3 1,50 0.059 0.043
12 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet 7appendixa table11relatedlinks ? ifxcoolmosap7webpage: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min 0.181 basic ? 0.130 0.264 0.060 0.116 0.009 0.248 0.024 7.30 6.70 0.80 0.32 3.10 0.10 1.80 0.091 basic 0.287 0.264 0.031 0.122 0.013 0.071 0.004 max inches min max 3.70 0.146 a2 1.70 0.067 0.75 1.10 0.030 ? ? - 3 3 1,50 0.059 0.043
13 700vcoolmosap7powertransistor IPN70R600P7S rev.2.2,2018-02-13 final data sheet revisionhistory IPN70R600P7S revision:2018-02-13,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.0 2017-06-23 release of final version 2.1 2017-09-15 changed to msl level 1 2.2 2018-02-13 corrected front page text trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2018infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min 0.181 basic ? 0.130 0.264 0.060 0.116 0.009 0.248 0.024 7.30 6.70 0.80 0.32 3.10 0.10 1.80 0.091 basic 0.287 0.264 0.031 0.122 0.013 0.071 0.004 max inches min max 3.70 0.146 a2 1.70 0.067 0.75 1.10 0.030 ? ? - 3 3 1,50 0.059 0.043

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